TS13002ACT Specs and Replacement

Type Designator: TS13002ACT

SMD Transistor Code: TSC13002A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO92

 TS13002ACT Substitution

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TS13002ACT datasheet

 6.1. Size:190K  taiwansemi

 ts13002a.pdf pdf_icon

TS13002ACT

TS13002A High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing ... See More ⇒

 6.2. Size:278K  taiwansemi

 ts13002a b07.pdf pdf_icon

TS13002ACT

TS13002A High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing ... See More ⇒

 7.1. Size:389K  taiwansemi

 ts13002ct.pdf pdf_icon

TS13002ACT

TS13002 High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.2A VCE(SAT) 0.5V @ IC / IB = 100mA / 10mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T... See More ⇒

 7.2. Size:278K  taiwansemi

 ts13002 b07.pdf pdf_icon

TS13002ACT

TS13002 High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.2A VCE(SAT) 0.5V @ IC / IB = 100mA / 10mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing ... See More ⇒

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Detailed specifications: TFN2411, TFN2412, TFN2444, TFN3838, TFN3906, TFN4061, TFN4505, TFN5094, 2SC5200, TS13002CT, TS13003BCT, TS13003CK, TS13003CT, TS13003HVCT, TS13003MVCT, TS13005CI, TS13005CZ

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