TS13007BCZ Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TS13007BCZ

Código: TSC13007

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 180 pF

Ganancia de corriente contínua (hFE): 6

Encapsulados: TO220

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TS13007BCZ datasheet

 6.1. Size:176K  taiwansemi
ts13007b a07.pdf pdf_icon

TS13007BCZ

TS13007B High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

 6.2. Size:177K  taiwansemi
ts13007b.pdf pdf_icon

TS13007BCZ

TS13007B High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007

 8.1. Size:190K  taiwansemi
ts13002a.pdf pdf_icon

TS13007BCZ

TS13002A High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

 8.2. Size:272K  taiwansemi
ts13009.pdf pdf_icon

TS13007BCZ

TS13009 High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1

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