TS13007BCZ. Аналоги и основные параметры
Наименование производителя: TS13007BCZ
Маркировка: TSC13007
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Ёмкость коллекторного перехода (Cc): 180 pf
Статический коэффициент передачи тока (hFE): 6
Корпус транзистора: TO220
Аналоги (замена) для TS13007BCZ
- подборⓘ биполярного транзистора по параметрам
TS13007BCZ даташит
6.1. Size:176K taiwansemi
ts13007b a07.pdf 
TS13007B High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007
6.2. Size:177K taiwansemi
ts13007b.pdf 
TS13007B High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 8A VCE(SAT) 3V @ IC / IB = 8A / 2A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS13007
8.1. Size:190K taiwansemi
ts13002a.pdf 
TS13002A High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
8.2. Size:272K taiwansemi
ts13009.pdf 
TS13009 High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1
8.3. Size:399K taiwansemi
ts13003bct.pdf 
TS13003B High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
8.4. Size:389K taiwansemi
ts13002ct.pdf 
TS13002 High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.2A VCE(SAT) 0.5V @ IC / IB = 100mA / 10mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
8.5. Size:374K taiwansemi
ts13005ck.pdf 
TS13005CK Taiwan Semiconductor High Voltage NPN Transistor FEATURES KEY PERFORMANCE PARAMETERS Low spread of dynamic parameters PARAMETER VALUE UNIT High switching speed BVCEO 400 V Low base drive requirement BVCBO 700 V Compliant to RoHS Directive 2011/65/EU and in IC 3 A accordance to WEEE 2002/96/EC. Halogen-free according to IEC 61249-2-21 VCE
8.6. Size:441K taiwansemi
ts13003mv.pdf 
TS13003MV High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 800V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 1A / 0.25A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
8.7. Size:361K taiwansemi
ts13005ci-cz.pdf 
TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
8.8. Size:333K taiwansemi
ts13003 d07.pdf 
TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition Pin Definition PRODUCT SUMMARY 1. Emitter 1. Emitter 2. Collector 2. Collector BVCEO 400V 3. Base 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transisto
8.9. Size:278K taiwansemi
ts13002a b07.pdf 
TS13002A High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.3A VCE(SAT) 1.5V @ IC / IB = 200mA / 20mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
8.10. Size:276K taiwansemi
ts13003hv a07.pdf 
TS13003HV High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
8.11. Size:274K taiwansemi
ts13009 a07.pdf 
TS13009 High Voltage NPN Transistor TO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 12A VCE(SAT) 1.5V @ IC / IB = 12A / 3A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing TS1
8.12. Size:164K taiwansemi
ts13003ck-ct.pdf 
TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition PRODUCT SUMMARY 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1.5A VCE(SAT) 1V @ IC =0.5A, IB =0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
8.13. Size:364K taiwansemi
ts13005 b07.pdf 
TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
8.14. Size:399K taiwansemi
ts13003b c07.pdf 
TS13003B High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 1.5A VCE(SAT) 0.8V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing T
8.15. Size:192K taiwansemi
ts13003hv.pdf 
TS13003HV High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 530V 3. Base BVCBO 900V IC 1.5A VCE(SAT) 0.5V @ IC / IB = 0.5A / 0.1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
8.16. Size:278K taiwansemi
ts13002 b07.pdf 
TS13002 High Voltage NPN Transistor TO-92 Pin Definition PRODUCT SUMMARY 1. Emitter 2. Collector BVCEO 400V 3. Base BVCBO 700V IC 0.2A VCE(SAT) 0.5V @ IC / IB = 100mA / 10mA Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing
Другие транзисторы: TS13002CT, TS13003BCT, TS13003CK, TS13003CT, TS13003HVCT, TS13003MVCT, TS13005CI, TS13005CZ, 2N3055, TS13009CZ, TFN5177, TFN807, TFN817, TFN847, TFNA06, TFNA14, TFNH10
