2N677 Todos los transistores

 0.1. Size:137K  1
 2n6770.pdf

 0.2. Size:144K  international rectifier
 2n6770 irf450.pdf

PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/AE) JANTXV2N6770 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF450 500V 0.400 12A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest S

 0.3. Size:64K  omnirel
 2n6764 2n6766 2n6768 2n6770.pdf

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/543 DESCRIPTION

 0.4. Size:82K  inchange semiconductor
 2n6771 2n6772 2n6773.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 High Switching Speed Low Saturation Voltage APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide

 0.5. Size:189K  inchange semiconductor
 2n6773.pdf

isc Silicon NPN Power Transistors 2N6773 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter cir

 0.6. Size:187K  inchange semiconductor
 2n6772.pdf

isc Silicon NPN Power Transistors 2N6772 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter cir

 0.7. Size:190K  inchange semiconductor
 2n6771.pdf

isc Silicon NPN Power Transistors 2N6771 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter cir