2N677 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N677
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 90 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.2 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2N677
2N677 Datasheet (PDF)
2n6770 irf450.pdf
PD - 90330FREPETITIVE AVALANCHE AND dv/dt RATED IRF450HEXFETTRANSISTORS JANTX2N6770THRU-HOLE (TO-204AA/AE) JANTXV2N6770500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF450 500V 0.400 12AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestS
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2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,QUALIFIED TO MIL-PRF-19500/543100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/543DESCRIPTION
2n6771 2n6772 2n6773.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 High Switching Speed Low Saturation Voltage APPLICATIONSDesigned for use in off-line power supplies and is also well suited for use in a wide
2n6773.pdf
isc Silicon NPN Power Transistors 2N6773DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and is also wellsuited for use in a wide range of inverter or converter cir
2n6772.pdf
isc Silicon NPN Power Transistors 2N6772DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and is also wellsuited for use in a wide range of inverter or converter cir
2n6771.pdf
isc Silicon NPN Power Transistors 2N6771DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies and is also wellsuited for use in a wide range of inverter or converter cir
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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