2N677 Specs and Replacement
Type Designator: 2N677
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2N677 Substitution
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2N677 datasheet
PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/AE) JANTXV2N6770 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF450 500V 0.400 12A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest S... See More ⇒
2n6764 2n6766 2n6768 2n6770.pdf ![]()
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/543 DESCRIPTION... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 High Switching Speed Low Saturation Voltage APPLICATIONS Designed for use in off-line power supplies and is also well suited for use in a wide ... See More ⇒
Detailed specifications: 2N674, 2N6740, 2N675, 2N6751, 2N6752, 2N6753, 2N6754, 2N676, 2N5551, 2N6771, 2N6772, 2N6773, 2N6774, 2N6775, 2N6776, 2N677A, 2N677B
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