TSC123JNND03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSC123JNND03  📄📄 

Código: E42

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: WBFBP-03B

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TSC123JNND03 datasheet

 ..1. Size:343K  jiangsu
 tsc123jnnd03.pdf pdf_icon

TSC123JNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC123JNND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see equiv

 9.1. Size:204K  taiwansemi
 tsc128dc.pdf pdf_icon

TSC123JNND03

TSC128D High Voltage NPN Transistor with Diode Pin Definition TO-220 TO-263 PRODUCT SUMMARY 1. Base (D2PAK) BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 4A / 1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable Stora

 9.2. Size:168K  taiwansemi
 tsc1203ecm.pdf pdf_icon

TSC123JNND03

TSC1203E High Voltage NPN Transistor TO-263 Pin Definition PRODUCT SUMMARY (D2PAK) 1. Base BVCBO 1050V 2. Collector 3. Emitter BVCEO 550V IC 5A VCE(SAT) 0.5V @ IC=1A, IB=200mA Features Ordering Information High Voltage Capability Part No. Package Packing High switching speed TSC1203ECM RNG TO-263 800pcs / 13 Reel Note G denote for Halogen Fr

 9.3. Size:165K  jiangsu
 tsc124ennd03.pdf pdf_icon

TSC123JNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.2 1.2 0.5) TSC124ENND03 TRANSISTOR TOP unit mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors

MOSTRAR MÁS

Otros transistores... TPV5051, TPV591, TPV593, TPV595, TPV595A, TPV596A, TPV597, TPR175, S9018, TSC124ENND03, TSC128DCZ, TSC128DCM, TSC136CZ, TSC1417, TSC143ENND03, TSC143TNND03, TSC144ENND03