All Transistors. TSC123JNND03 Datasheet

 

TSC123JNND03 Datasheet and Replacement


   Type Designator: TSC123JNND03
   SMD Transistor Code: E42
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: WBFBP-03B
 

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TSC123JNND03 Datasheet (PDF)

 ..1. Size:343K  jiangsu
 tsc123jnnd03.pdf pdf_icon

TSC123JNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC123JNND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see equiv

 9.1. Size:204K  taiwansemi
 tsc128dc.pdf pdf_icon

TSC123JNND03

TSC128D High Voltage NPN Transistor with Diode Pin Definition: TO-220 TO-263 PRODUCT SUMMARY 1. Base (D2PAK) BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 4A / 1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable Stora

 9.2. Size:168K  taiwansemi
 tsc1203ecm.pdf pdf_icon

TSC123JNND03

TSC1203E High Voltage NPN Transistor TO-263 Pin Definition: PRODUCT SUMMARY (D2PAK) 1. Base BVCBO 1050V 2. Collector 3. Emitter BVCEO 550V IC 5A VCE(SAT) 0.5V @ IC=1A, IB=200mA Features Ordering Information High Voltage Capability Part No. Package Packing High switching speed TSC1203ECM RNG TO-263 800pcs / 13 Reel Note: G denote for Halogen Fr

 9.3. Size:165K  jiangsu
 tsc124ennd03.pdf pdf_icon

TSC123JNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.21.20.5) TSC124ENND03 TRANSISTOR TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors

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Datasheet: TPV5051 , TPV591 , TPV593 , TPV595 , TPV595A , TPV596A , TPV597 , TPR175 , 2SD1555 , TSC124ENND03 , TSC128DCZ , TSC128DCM , TSC136CZ , TSC1417 , TSC143ENND03 , TSC143TNND03 , TSC144ENND03 .

History: ECG347 | MMBT8050 | 2SC2910 | TIS84

Keywords - TSC123JNND03 transistor datasheet

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