TSC123JNND03 Datasheet. Specs and Replacement

Type Designator: TSC123JNND03  📄📄 

SMD Transistor Code: E42

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: WBFBP-03B

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TSC123JNND03 datasheet

 ..1. Size:343K  jiangsu

 tsc123jnnd03.pdf pdf_icon

TSC123JNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC123JNND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see equiv... See More ⇒

 9.1. Size:204K  taiwansemi

 tsc128dc.pdf pdf_icon

TSC123JNND03

TSC128D High Voltage NPN Transistor with Diode Pin Definition TO-220 TO-263 PRODUCT SUMMARY 1. Base (D2PAK) BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 4A / 1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable Stora... See More ⇒

 9.2. Size:168K  taiwansemi

 tsc1203ecm.pdf pdf_icon

TSC123JNND03

TSC1203E High Voltage NPN Transistor TO-263 Pin Definition PRODUCT SUMMARY (D2PAK) 1. Base BVCBO 1050V 2. Collector 3. Emitter BVCEO 550V IC 5A VCE(SAT) 0.5V @ IC=1A, IB=200mA Features Ordering Information High Voltage Capability Part No. Package Packing High switching speed TSC1203ECM RNG TO-263 800pcs / 13 Reel Note G denote for Halogen Fr... See More ⇒

 9.3. Size:165K  jiangsu

 tsc124ennd03.pdf pdf_icon

TSC123JNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.2 1.2 0.5) TSC124ENND03 TRANSISTOR TOP unit mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors ... See More ⇒

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Detailed specifications: TPV5051, TPV591, TPV593, TPV595, TPV595A, TPV596A, TPV597, TPR175, S9018, TSC124ENND03, TSC128DCZ, TSC128DCM, TSC136CZ, TSC1417, TSC143ENND03, TSC143TNND03, TSC144ENND03

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