TSC124ENND03 Todos los transistores

 

TSC124ENND03 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSC124ENND03
   Código: 25
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 56
   Paquete / Cubierta: WBFBP-03B
 

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TSC124ENND03 Datasheet (PDF)

 ..1. Size:165K  jiangsu
 tsc124ennd03.pdf pdf_icon

TSC124ENND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.21.20.5) TSC124ENND03 TRANSISTOR TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors

 9.1. Size:204K  taiwansemi
 tsc128dc.pdf pdf_icon

TSC124ENND03

TSC128D High Voltage NPN Transistor with Diode Pin Definition: TO-220 TO-263 PRODUCT SUMMARY 1. Base (D2PAK) BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 4A / 1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable Stora

 9.2. Size:168K  taiwansemi
 tsc1203ecm.pdf pdf_icon

TSC124ENND03

TSC1203E High Voltage NPN Transistor TO-263 Pin Definition: PRODUCT SUMMARY (D2PAK) 1. Base BVCBO 1050V 2. Collector 3. Emitter BVCEO 550V IC 5A VCE(SAT) 0.5V @ IC=1A, IB=200mA Features Ordering Information High Voltage Capability Part No. Package Packing High switching speed TSC1203ECM RNG TO-263 800pcs / 13 Reel Note: G denote for Halogen Fr

 9.3. Size:343K  jiangsu
 tsc123jnnd03.pdf pdf_icon

TSC124ENND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC123JNND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see equiv

MOSTRAR MÁS

Otros transistores... TPV591 , TPV593 , TPV595 , TPV595A , TPV596A , TPV597 , TPR175 , TSC123JNND03 , 2SC1740 , TSC128DCZ , TSC128DCM , TSC136CZ , TSC1417 , TSC143ENND03 , TSC143TNND03 , TSC144ENND03 , TSC148DCI .

History: KSB1149Y | 2SC2961 | 2SC4747 | T1973 | TIP160 | CHT5401GP | TIP3054

 

 
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