TSC114YNND03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TSC114YNND03  📄📄 

Código: 64

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 68

Encapsulados: WBFBP-03B

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TSC114YNND03 datasheet

 ..1. Size:304K  jiangsu
 tsc114ynnd03.pdf pdf_icon

TSC114YNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.2 1.2 0.5) TSC114YNND03 TRANSISTOR TOP unit mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an BACK 3. OUT without connecting external input

 8.1. Size:268K  jiangsu
 tsc114ennd03.pdf pdf_icon

TSC114YNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC114ENND03 TRANSISTOR WBFBP-03B (1.2 1.2 0.5) TOP unit mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit 2. GND without connecting external input resistors (see equivalent ci

 8.2. Size:292K  jiangsu
 tsc114tnnd03.pdf pdf_icon

TSC114YNND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC114TNND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see

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