TSC114YNND03 Datasheet. Specs and Replacement
Type Designator: TSC114YNND03 📄📄
SMD Transistor Code: 64
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: WBFBP-03B
TSC114YNND03 Substitution
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TSC114YNND03 datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.2 1.2 0.5) TSC114YNND03 TRANSISTOR TOP unit mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an BACK 3. OUT without connecting external input ... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC114ENND03 TRANSISTOR WBFBP-03B (1.2 1.2 0.5) TOP unit mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit 2. GND without connecting external input resistors (see equivalent ci... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC114TNND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see ... See More ⇒
Detailed specifications: TSA884CX, TSA894CT, TPT5609-A, TPT5609-B, TPT5609-C, TSC10CT, TSC114ENND03, TSC114TNND03, A1015, TSC1203ECM, TP9383, TP749, TP3020A, TP5002, TP5002S, TP7L10, TP9012NND03
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