TSC114YNND03 Datasheet, Equivalent, Cross Reference Search
Type Designator: TSC114YNND03
SMD Transistor Code: 64
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Noise Figure, dB: -
Package: WBFBP-03B
TSC114YNND03 Transistor Equivalent Substitute - Cross-Reference Search
TSC114YNND03 Datasheet (PDF)
tsc114ynnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.21.20.5) TSC114YNND03 TRANSISTOR TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an BACK 3. OUT without connecting external input
tsc114ennd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC114ENND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit2. GND without connecting external input resistors (see equivalent ci
tsc114tnnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC114TNND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
