TP9012NND03 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TP9012NND03
Código: 2T1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 5 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: WBFBP-03B
Búsqueda de reemplazo de transistor bipolar TP9012NND03
TP9012NND03 Datasheet (PDF)
tp9012nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP unit: mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl
tp9014nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER High hFE and good linearity BACK 3. COLLECTOR Complementary to TP9015NND03 E B APPLICATION Pre-Amplifier, Low
tp9013nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.21.20.5) TOP unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO
tp9015nnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.21.20.5) TOP PNP Epitaxial Silicon Transistor unit: mm FEATURES B E High hFE and good linearity C 1. BASE Complementary to TP9014NND03 C 2. EMITTER BACK APPLICATION 3. COLLECTOR Low Frequency, Low Nois
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: TP4123 | BU141 | CD965 | 2N5091 | KT885A | NR421HF | KT9127A
History: TP4123 | BU141 | CD965 | 2N5091 | KT885A | NR421HF | KT9127A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050