TP9012NND03 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TP9012NND03  📄📄 

Código: 2T1

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 5 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: WBFBP-03B

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TP9012NND03 datasheet

 ..1. Size:340K  jiangsu
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TP9012NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9012NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2 1.2 0.5) TOP unit mm PNP Epitaxial Silicon Transistor FEATURES B E Complementary to TP9013NND03 1. BASE C Excellent hFE linearity 2. EMITTER 3. COLLECTOR APPLICATION BACK 150mW Output Amplifier of Potabl

 9.1. Size:287K  jiangsu
 tp9014nnd03.pdf pdf_icon

TP9012NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TP9014NND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION B E NPN Epitaxial Silicon Transistor C 1. BASE C FEATURES 2. EMITTER High hFE and good linearity BACK 3. COLLECTOR Complementary to TP9015NND03 E B APPLICATION Pre-Amplifier, Low

 9.2. Size:305K  jiangsu
 tp9013nnd03.pdf pdf_icon

TP9012NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors TP9013NND03 TRANSISTOR DESCRIPTION C NPN Epitaxial Silicon Transistor WBFBP-03B (1.2 1.2 0.5) TOP unit mm FEATURES High Collector Current. (IC=500mA) Complementary to TP9012NND03 B E 1. BASE Excellent hFE linearity. C 2. EMITTER C 3. COLLECTOR APPLICATIO

 9.3. Size:305K  jiangsu
 tp9015nnd03.pdf pdf_icon

TP9012NND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors TP9015NND03 TRANSISTOR C WBFBP-03B DESCRIPTION (1.2 1.2 0.5) TOP PNP Epitaxial Silicon Transistor unit mm FEATURES B E High hFE and good linearity C 1. BASE Complementary to TP9014NND03 C 2. EMITTER BACK APPLICATION 3. COLLECTOR Low Frequency, Low Nois

MOSTRAR MÁS

Otros transistores... TSC114YNND03, TSC1203ECM, TP9383, TP749, TP3020A, TP5002, TP5002S, TP7L10, 2N3906, TP9013NND03, TP9014NND03, TP9015NND03, N0202R, N0202S, NE02103, NE02107, NE02112