NE02133
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NE02133
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 25
V
Tensión colector-emisor (Vce): 12
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.07
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 4500
MHz
Capacitancia de salida (Cc): 0.7
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
SOT23
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NE02133
Datasheet (PDF)
..1. Size:1108K nec
ne02133.pdf
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..2. Size:171K nec
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf
NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a
8.1. Size:1108K nec
ne02132.pdf
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8.2. Size:1108K nec
ne02135.pdf
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9.1. Size:1108K nec
ne02112.pdf
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9.2. Size:178K nec
ne021 series.pdf
NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a
9.3. Size:1108K nec
ne02107.pdf
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9.4. Size:1108K nec
ne02103.pdf
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