NE02133 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NE02133

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.07 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4500 MHz

Capacitancia de salida (Cc): 0.7 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: SOT23

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NE02133 datasheet

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NE02133

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NE02133

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a

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NE02133

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NE02133

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MOSTRAR MÁS

Otros transistores... TP9014NND03, TP9015NND03, N0202R, N0202S, NE02103, NE02107, NE02112, NE02132, A733, NE02135, NE73430, NE73435, NUS5530MN, NXP3875G, NXP3875Y, NZT44H8, NZT45H8