NE02133 Datasheet and Replacement
Type Designator: NE02133
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4500 MHz
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT23
NE02133 Transistor Equivalent Substitute - Cross-Reference Search
NE02133 Datasheet (PDF)
ne02133.pdf
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2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf
NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a... See More ⇒
ne02132.pdf
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ne02135.pdf
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Datasheet: TP9014NND03 , TP9015NND03 , N0202R , N0202S , NE02103 , NE02107 , NE02112 , NE02132 , A733 , NE02135 , NE73430 , NE73435 , NUS5530MN , NXP3875G , NXP3875Y , NZT44H8 , NZT45H8 .
History: 2SD1682 | 2N6190 | 2SB762B | ET402 | 2SD1623 | 2SD1606 | BCR191S
Keywords - NE02133 transistor datasheet
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History: 2SD1682 | 2N6190 | 2SB762B | ET402 | 2SD1623 | 2SD1606 | BCR191S
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