NE02133 Datasheet. Specs and Replacement

Type Designator: NE02133  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.07 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4500 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: SOT23

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NE02133 datasheet

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NE02133

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NE02133

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a... See More ⇒

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NE02133

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 8.2. Size:1108K  nec

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NE02133

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Detailed specifications: TP9014NND03, TP9015NND03, N0202R, N0202S, NE02103, NE02107, NE02112, NE02132, A733, NE02135, NE73430, NE73435, NUS5530MN, NXP3875G, NXP3875Y, NZT44H8, NZT45H8

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