NE02135 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NE02135
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.07 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4500 MHz
Capacitancia de salida (Cc): 0.6 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO120
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NE02135 datasheet
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf
NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a
ne02135.pdf
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ne02133.pdf
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ne02132.pdf
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Otros transistores... TP9015NND03 , N0202R , N0202S , NE02103 , NE02107 , NE02112 , NE02132 , NE02133 , S8550 , NE73430 , NE73435 , NUS5530MN , NXP3875G , NXP3875Y , NZT44H8 , NZT45H8 , N0501S .
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