NE02135 Datasheet and Replacement
Type Designator: NE02135
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4500 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO120
NE02135 Substitution
NE02135 Datasheet (PDF)
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf
NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a
ne02135.pdf
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ne02133.pdf
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ne02132.pdf
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Datasheet: TP9015NND03 , N0202R , N0202S , NE02103 , NE02107 , NE02112 , NE02132 , NE02133 , A940 , NE73430 , NE73435 , NUS5530MN , NXP3875G , NXP3875Y , NZT44H8 , NZT45H8 , N0501S .
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