NZT45H8 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NZT45H8
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1500 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 40 MHz
Ganancia de corriente contínua (hFE): 60
Encapsulados: SOT223
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NZT45H8 datasheet
d45h8 nzt45h8.pdf
D45H8 NZT45H8 C E B C C E B TO-220 SOT-223 PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 8.0 A TJ, Tstg Operating and St
d45h8 nzt45h8.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... NE02133, NE02135, NE73430, NE73435, NUS5530MN, NXP3875G, NXP3875Y, NZT44H8, 2SA1837, N0501S, NJD1718T4G, NJD2873T4G, NJD35N04G, NS2029M3T5G, NSVT30010MXV6T1G, NSVT3904DP6T5G, NSVT3904DXV6T1G
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