NZT45H8 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NZT45H8

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1500 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT223

 Búsqueda de reemplazo de NZT45H8

- Selecciónⓘ de transistores por parámetros

 

NZT45H8 datasheet

 ..1. Size:130K  fairchild semi
d45h8 nzt45h8.pdf pdf_icon

NZT45H8

D45H8 NZT45H8 C E B C C E B TO-220 SOT-223 PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 8.0 A TJ, Tstg Operating and St

 ..2. Size:440K  onsemi
d45h8 nzt45h8.pdf pdf_icon

NZT45H8

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... NE02133, NE02135, NE73430, NE73435, NUS5530MN, NXP3875G, NXP3875Y, NZT44H8, 2SA1837, N0501S, NJD1718T4G, NJD2873T4G, NJD35N04G, NS2029M3T5G, NSVT30010MXV6T1G, NSVT3904DP6T5G, NSVT3904DXV6T1G