NZT45H8 Datasheet. Specs and Replacement
Type Designator: NZT45H8 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1500 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT223
NZT45H8 Substitution
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NZT45H8 datasheet
D45H8 NZT45H8 C E B C C E B TO-220 SOT-223 PNP Power Amplifier This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V IC Collector Current - Continuous 8.0 A TJ, Tstg Operating and St... See More ⇒
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: NE02133, NE02135, NE73430, NE73435, NUS5530MN, NXP3875G, NXP3875Y, NZT44H8, 2SA1837, N0501S, NJD1718T4G, NJD2873T4G, NJD35N04G, NS2029M3T5G, NSVT30010MXV6T1G, NSVT3904DP6T5G, NSVT3904DXV6T1G
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