NZT45H8 Datasheet, Equivalent, Cross Reference Search
Type Designator: NZT45H8
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1500 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT223
NZT45H8 Transistor Equivalent Substitute - Cross-Reference Search
NZT45H8 Datasheet (PDF)
d45h8 nzt45h8.pdf
D45H8 NZT45H8CEBC CEBTO-220 SOT-223PNP Power AmplifierThis device is designed for power amplifier, regulator and switchingcircuits where speed is important. Sourced from Process 5Q.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 60 VIC Collector Current - Continuous 8.0 ATJ, Tstg Operating and St
d45h8 nzt45h8.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
