NJT4031NT3G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NJT4031NT3G
Código: 4031N
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 215
MHz
Capacitancia de salida (Cc): 25
pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
SOT223
NJT4031NT3G
Datasheet (PDF)
6.1. Size:180K onsemi
njt4031n njv4031nt1g njv4031nt3g.pdf 
NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeatures Epoxy Meets UL 94, V-0 @ 0.125 inNPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring3.0 AMPERESUnique Site and Control Change Requirements; AEC-Q10140 VOLTS, 2.0 WATTSQualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a
6.2. Size:112K onsemi
njt4031n.pdf
NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeatures Epoxy Meets UL 94, V-0 @ 0.125 inNPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring3.0 AMPERESUnique Site and Control Change Requirements; AEC-Q10140 VOLTS, 2.0 WATTSQualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a
8.1. Size:190K onsemi
njt4030p njv4030p.pdf
Bipolar Power TransistorsPNP SiliconNJT4030P, NJV4030PFeatures Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 AMPERESCompliant40 VOLTS, 2.0 WATT
8.2. Size:132K onsemi
njt4030p-t.pdf
NJT4030P,NJV4030PT1G,NJV4030PT3GBipolar Power TransistorsPNP Siliconhttp://onsemi.comFeaturesPNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2
8.3. Size:274K onsemi
njt4030p-d.pdf
NJT4030PBipolar Power TransistorsPNP SiliconFeatures Collector --Emitter Sustaining Voltage --http://onsemi.comVCEO(sus) =40Vdc (Min) @IC =10mAdc High DC Current Gain --PNP TRANSISTORhFE = 200 (Min) @ IC =1.0 Adc= 100 (Min) @ IC =3.0 Adc3.0 AMPERES Low Collector --Emitter Saturation Voltage --40 VOLTS, 2.0 WATTSVCE(sat) = 0.200 Vdc (Max) @ IC =1.0 Adc= 0.5
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
