NSM80100MT1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSM80100MT1G  📄📄 

Código: 3PN

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.27 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT26 SOT457

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NSM80100MT1G datasheet

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NSM80100MT1G

NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http //onsemi.com LCD Control Board High Speed Switching PNP Transistor with Dual Series High Voltage Switching Switching Diode MAXIMUM RATINGS - PNP TRANSISTOR Rating Symbol Value Unit 6 5 4 Collector-E

 7.1. Size:111K  onsemi
 nsm80101mt1g.pdf pdf_icon

NSM80100MT1G

NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http //onsemi.com LCD Control Board High Speed Switching NPN Transistor with Dual Series High Voltage Switching Switching Diode MAXIMUM RATINGS - PNP TRANSISTOR Rating Symbol Value Unit 6 5 4 Collector-E

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