NSM80101MT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NSM80101MT1G

Código: 3NP

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.27 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT26 SOT457

 Búsqueda de reemplazo de NSM80101MT1G

- Selecciónⓘ de transistores por parámetros

 

NSM80101MT1G datasheet

 ..1. Size:111K  onsemi
 nsm80101mt1g.pdf pdf_icon

NSM80101MT1G

NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http //onsemi.com LCD Control Board High Speed Switching NPN Transistor with Dual Series High Voltage Switching Switching Diode MAXIMUM RATINGS - PNP TRANSISTOR Rating Symbol Value Unit 6 5 4 Collector-E

 7.1. Size:200K  onsemi
 nsm80100mt1g.pdf pdf_icon

NSM80101MT1G

NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http //onsemi.com LCD Control Board High Speed Switching PNP Transistor with Dual Series High Voltage Switching Switching Diode MAXIMUM RATINGS - PNP TRANSISTOR Rating Symbol Value Unit 6 5 4 Collector-E

Otros transistores... NJT4030PT1G, NJT4030PT3G, NJT4031N, NJT4031NT3G, NSL12AWT1G, NSM4002MR6, NSM6056M, NSM80100MT1G, BC549, NSS12100M3, NSS12100UW3TCG, NSS12100XV6, NSS12200LT1G, NSS12200W, NSS12201LT1G, NSV12100UW3TCG, NSV12100XV6T1G