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NSS12100M3 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS12100M3
   Código: VE
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.48 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT723
 

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NSS12100M3 Datasheet (PDF)

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NSS12100M3

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 0.1. Size:82K  onsemi
nss12100m3t5g.pdf pdf_icon

NSS12100M3

NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 6.1. Size:63K  onsemi
nss12100uw3tcg.pdf pdf_icon

NSS12100M3

NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

 6.2. Size:100K  onsemi
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NSS12100M3

NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa

Otros transistores... NJT4030PT3G , NJT4031N , NJT4031NT3G , NSL12AWT1G , NSM4002MR6 , NSM6056M , NSM80100MT1G , NSM80101MT1G , D882P , NSS12100UW3TCG , NSS12100XV6 , NSS12200LT1G , NSS12200W , NSS12201LT1G , NSV12100UW3TCG , NSV12100XV6T1G , NSV1C200LT1G .

 

 
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