Биполярный транзистор NSS12100M3
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSS12100M3
Маркировка: VE
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.48
W
Макcимально допустимое напряжение коллектор-база (Ucb): 12
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 150
°C
Ёмкость коллекторного перехода (Cc): 15
pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора:
SOT723
Аналоги (замена) для NSS12100M3
NSS12100M3
Datasheet (PDF)
..1. Size:82K onsemi
nss12100m3.pdf 
NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.
0.1. Size:82K onsemi
nss12100m3t5g.pdf 
NSS12100M3T5G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductor's e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.
6.1. Size:63K onsemi
nss12100uw3tcg.pdf 
NSS12100UW3TCG12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
6.2. Size:100K onsemi
nss12100xv6.pdf 
NSS12100XV6T1G12 V, 1 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is importa
6.3. Size:196K onsemi
nss12100xv6t1g.pdf 
NSS12100XV6T1GLow VCE(sat) Transistor, PNP, 12 V, 1.0 A, SOT-563 PackageON Semiconductors e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTS, 1.0 AMPSwhere
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