NSS12100UW3TCG Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS12100UW3TCG
Código: VG
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.1 W
Tensión colector-base (Vcb): 12 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: WDFN3
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NSS12100UW3TCG datasheet
nss12100uw3tcg.pdf
NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
nss12100m3t5g.pdf
NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
nss12100m3.pdf
NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
nss12100xv6.pdf
NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is importa
Otros transistores... NJT4031N, NJT4031NT3G, NSL12AWT1G, NSM4002MR6, NSM6056M, NSM80100MT1G, NSM80101MT1G, NSS12100M3, 2SA1015, NSS12100XV6, NSS12200LT1G, NSS12200W, NSS12201LT1G, NSV12100UW3TCG, NSV12100XV6T1G, NSV1C200LT1G, NSV1C200MZ4T1G
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