NSS12200LT1G Todos los transistores

 

NSS12200LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS12200LT1G
   Código: VE
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.71 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 120 pF
   Ganancia de corriente contínua (hfe): 250
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

NSS12200LT1G Datasheet (PDF)

 ..1. Size:122K  onsemi
 nss12200lt1g.pdf pdf_icon

NSS12200LT1G

NSS12200LT1G12 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 5.1. Size:192K  onsemi
 nss12200l.pdf pdf_icon

NSS12200LT1G

NSS12200L12 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.www.onsemi.comT

 6.1. Size:179K  onsemi
 nss12200wt1g.pdf pdf_icon

NSS12200LT1G

NSS12200WT1GLow VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 PackageON Semiconductors e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTSwhere affordable e

 6.2. Size:105K  onsemi
 nss12200w.pdf pdf_icon

NSS12200LT1G

NSS12200WT1G12 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD1922 | 2SC2617 | HSB772 | 2N3407 | BC266B | MMBT5087L

 

 
Back to Top

 


 
.