NSS12201LT1G Todos los transistores

 

NSS12201LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS12201LT1G
   Código: VF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.54 W
   Tensión colector-base (Vcb): 12 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 75 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar NSS12201LT1G

 

NSS12201LT1G Datasheet (PDF)

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NSS12201LT1G

NSS12201LT1G 12 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 5.1. Size:126K  onsemi
nss12201l.pdf pdf_icon

NSS12201LT1G

NSS12201LT1G 12 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 7.1. Size:122K  onsemi
nss12200lt1g.pdf pdf_icon

NSS12201LT1G

NSS12200LT1G 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 7.2. Size:192K  onsemi
nss12200l.pdf pdf_icon

NSS12201LT1G

NSS12200L 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. www.onsemi.com T

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History: 2SC1823 | 3CG950 | DTL8012 | CHUMB8GP | INC6001AC1 | NSE180 | CHT857BGP

 

 
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