Биполярный транзистор NSS12201LT1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSS12201LT1G
Маркировка: VF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.54
W
Макcимально допустимое напряжение коллектор-база (Ucb): 12
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 2
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Ёмкость коллекторного перехода (Cc): 75
pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора:
SOT23
Аналоги (замена) для NSS12201LT1G
NSS12201LT1G
Datasheet (PDF)
..1. Size:599K onsemi
nss12201lt1g.pdf 
NSS12201LT1G12 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
5.1. Size:126K onsemi
nss12201l.pdf 
NSS12201LT1G12 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
7.1. Size:122K onsemi
nss12200lt1g.pdf 
NSS12200LT1G12 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
7.2. Size:192K onsemi
nss12200l.pdf 
NSS12200L12 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.www.onsemi.comT
7.3. Size:179K onsemi
nss12200wt1g.pdf 
NSS12200WT1GLow VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 PackageON Semiconductors e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra lowhttp://onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications 12 VOLTSwhere affordable e
7.4. Size:105K onsemi
nss12200w.pdf 
NSS12200WT1G12 V, 2 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important
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