NSV1C200MZ4T1G Todos los transistores

 

NSV1C200MZ4T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV1C200MZ4T1G
   Código: 1C200
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT223

 Búsqueda de reemplazo de transistor bipolar NSV1C200MZ4T1G

 

NSV1C200MZ4T1G Datasheet (PDF)

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 nsv1c200mz4t1g.pdf pdf_icon

NSV1C200MZ4T1G

NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont

 3.1. Size:198K  onsemi
 nss1c200mz4 nsv1c200mz4.pdf pdf_icon

NSV1C200MZ4T1G

PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications -100 VOLTS, 2.0 AMPS where affordable ef

 6.1. Size:68K  onsemi
 nsv1c200lt1g.pdf pdf_icon

NSV1C200MZ4T1G

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

 6.2. Size:129K  onsemi
 nss1c200l nsv1c200l.pdf pdf_icon

NSV1C200MZ4T1G

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

MOSTRAR MÁS

Otros transistores... NSS12100UW3TCG , NSS12100XV6 , NSS12200LT1G , NSS12200W , NSS12201LT1G , NSV12100UW3TCG , NSV12100XV6T1G , NSV1C200LT1G , MPSA42 , NSV1C201LT1G , NSV1C201MZ4T1G , NSV1C300ET4G , NSV1C301ET4G , NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , NSV2029M3T5G .

History: KRA557F | NTE2401 | KRA564F | KRA523T

 

 
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