NSV1C200MZ4T1G - аналоги и даташиты биполярного транзистора

 

NSV1C200MZ4T1G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NSV1C200MZ4T1G
   Маркировка: 1C200
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 120 MHz
   Ёмкость коллекторного перехода (Cc): 22 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT223

 Аналоги (замена) для NSV1C200MZ4T1G

 

NSV1C200MZ4T1G Datasheet (PDF)

 ..1. Size:109K  onsemi
 nsv1c200mz4t1g.pdf pdf_icon

NSV1C200MZ4T1G

NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont

 3.1. Size:198K  onsemi
 nss1c200mz4 nsv1c200mz4.pdf pdf_icon

NSV1C200MZ4T1G

PNP Transistor, Low VCE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications -100 VOLTS, 2.0 AMPS where affordable ef

 6.1. Size:68K  onsemi
 nsv1c200lt1g.pdf pdf_icon

NSV1C200MZ4T1G

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

 6.2. Size:129K  onsemi
 nss1c200l nsv1c200l.pdf pdf_icon

NSV1C200MZ4T1G

NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... NSS12100UW3TCG , NSS12100XV6 , NSS12200LT1G , NSS12200W , NSS12201LT1G , NSV12100UW3TCG , NSV12100XV6T1G , NSV1C200LT1G , MPSA42 , NSV1C201LT1G , NSV1C201MZ4T1G , NSV1C300ET4G , NSV1C301ET4G , NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , NSV2029M3T5G .

History: CHT5988ZGP | CHT2222AGP-A | AC173VII

 

 
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