NSV1C201MZ4T1G Todos los transistores

 

NSV1C201MZ4T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSV1C201MZ4T1G
   Código: 1C201
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 140 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 22 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT223
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NSV1C201MZ4T1G Datasheet (PDF)

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 nsv1c201mz4t1g.pdf pdf_icon

NSV1C201MZ4T1G

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 3.1. Size:104K  onsemi
 nss1c201mz4 nsv1c201mz4.pdf pdf_icon

NSV1C201MZ4T1G

NSS1C201MZ4,NSV1C201MZ4100 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 6.1. Size:76K  onsemi
 nsv1c201lt1g.pdf pdf_icon

NSV1C201MZ4T1G

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationswww.onsemi.comwhere affordable efficient energy control is i

 6.2. Size:137K  onsemi
 nss1c201l nsv1c201l.pdf pdf_icon

NSV1C201MZ4T1G

NSS1C201L, NSV1C201L100 V, 3.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is i

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TN3467 | BFS91A | FBP5096G3

 

 
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