NSV1C201MZ4T1G - аналоги и даташиты биполярного транзистора

 

NSV1C201MZ4T1G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NSV1C201MZ4T1G
   Маркировка: 1C201
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.8 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 22 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: SOT223

 Аналоги (замена) для NSV1C201MZ4T1G

 

NSV1C201MZ4T1G Datasheet (PDF)

 ..1. Size:109K  onsemi
 nsv1c201mz4t1g.pdf pdf_icon

NSV1C201MZ4T1G

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont

 3.1. Size:104K  onsemi
 nss1c201mz4 nsv1c201mz4.pdf pdf_icon

NSV1C201MZ4T1G

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These http //onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy cont

 6.1. Size:76K  onsemi
 nsv1c201lt1g.pdf pdf_icon

NSV1C201MZ4T1G

NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is i

 6.2. Size:137K  onsemi
 nss1c201l nsv1c201l.pdf pdf_icon

NSV1C201MZ4T1G

NSS1C201L, NSV1C201L 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is i

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... NSS12200LT1G , NSS12200W , NSS12201LT1G , NSV12100UW3TCG , NSV12100XV6T1G , NSV1C200LT1G , NSV1C200MZ4T1G , NSV1C201LT1G , 431 , NSV1C300ET4G , NSV1C301ET4G , NSV20101JT1G , NSV20200LT1G , NSV20201LT1G , NSV2029M3T5G , NJV4030PT1G , NJV4030PT3G .

History: 2SA813 | CHDTC124TKGP | BU361 | DNLS160V

 

 
Back to Top

 


 
.