NJV4030PT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NJV4030PT1G
   Código: 4030P
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 160 MHz
   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de transistor bipolar NJV4030PT1G

NJV4030PT1G Datasheet (PDF)

5.1. Size:132K onsemi
njv4030pt.pdf

NJT4030P,NJV4030PT1G,NJV4030PT3GBipolar Power TransistorsPNP Siliconhttp://onsemi.comFeaturesPNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2

6.1. Size:190K onsemi
njt4030p njv4030p.pdf

Bipolar Power TransistorsPNP SiliconNJT4030P, NJV4030PFeatures Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 AMPERESCompliant40 VOLTS, 2.0 WATT

8.1. Size:180K onsemi
njt4031n njv4031nt1g njv4031nt3g.pdf

NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeatures Epoxy Meets UL 94, V-0 @ 0.125 inNPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring3.0 AMPERESUnique Site and Control Change Requirements; AEC-Q10140 VOLTS, 2.0 WATTSQualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a

8.2. Size:132K onsemi
njv4031nt.pdf

NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeaturesNPN TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - 40 VOLTS, 2.0 WATTShFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.1

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KSB798Y | KSB834 | MD918HX | RCA9228C

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050