NJV4030PT3G Todos los transistores

 

NJV4030PT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJV4030PT3G
   Código: 4030P
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 160 MHz
   Capacitancia de salida (Cc): 40 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT223
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NJV4030PT3G Datasheet (PDF)

 5.1. Size:132K  onsemi
njv4030pt.pdf pdf_icon

NJV4030PT3G

NJT4030P,NJV4030PT1G,NJV4030PT3GBipolar Power TransistorsPNP Siliconhttp://onsemi.comFeaturesPNP TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc40 VOLTS, 2.0 WATTS High DC Current Gain - hFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.2

 6.1. Size:190K  onsemi
njt4030p njv4030p.pdf pdf_icon

NJV4030PT3G

Bipolar Power TransistorsPNP SiliconNJT4030P, NJV4030PFeatures Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapablePNP TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3.0 AMPERESCompliant40 VOLTS, 2.0 WATT

 8.1. Size:180K  onsemi
njt4031n njv4031nt1g njv4031nt3g.pdf pdf_icon

NJV4030PT3G

NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeatures Epoxy Meets UL 94, V-0 @ 0.125 inNPN TRANSISTOR NJV Prefix for Automotive and Other Applications Requiring3.0 AMPERESUnique Site and Control Change Requirements; AEC-Q10140 VOLTS, 2.0 WATTSQualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free a

 8.2. Size:132K  onsemi
njv4031nt.pdf pdf_icon

NJV4030PT3G

NJT4031N,NJV4031NT1G,NJV4031NT3GBipolar Power TransistorsNPN Siliconhttp://onsemi.comFeaturesNPN TRANSISTOR Collector -Emitter Sustaining Voltage - 3.0 AMPERESVCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - 40 VOLTS, 2.0 WATTShFE = 200 (Min) @ IC = 1.0 Adc= 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.1

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History: BUW42 | PBSS305ND | 2SC4043 | 3CA5679 | BC817-40 | D45VH4 | BCW16M

 

 
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