NJVNJD2873T4G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJVNJD2873T4G  📄📄 

Código: J2873G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 65 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO252

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NJVNJD2873T4G datasheet

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NJVNJD2873T4G

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NJVNJD2873T4G

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl

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NJVNJD2873T4G

NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor http //onsemi.com This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. DARLINGTON Features POWER TRANSISTORS Exceptional Safe Operating Area 4 AMPERES High VCE; High Current Gain 350 VOLTS

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