NJVNJD2873T4G Specs and Replacement
Type Designator: NJVNJD2873T4G
SMD Transistor Code: J2873G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 65 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO252
NJVNJD2873T4G Substitution
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NJVNJD2873T4G datasheet
NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N... See More ⇒
NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl... See More ⇒
NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor http //onsemi.com This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. DARLINGTON Features POWER TRANSISTORS Exceptional Safe Operating Area 4 AMPERES High VCE; High Current Gain 350 VOLTS ... See More ⇒
Detailed specifications: NJV4030PT3G, NJV4031NT1G, NJV4031NT3G, NJVBUB323ZT4G, NJVMJB41CT4G, NJVMJB42CT4G, NJVMJB44H11T4G, NJVMJB45H11T4G, BD139, NJVNJD35N04G, NJVNJD35N04T4G, NJW1302G, NJW21193G, NJW21194G, NJW3281G, NJW44H11, NJW44H11G
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