NJVNJD35N04T4G Todos los transistores

 

NJVNJD35N04T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NJVNJD35N04T4G
   Código: NJD35N04
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO252
 

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NJVNJD35N04T4G Datasheet (PDF)

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NJVNJD35N04T4G

NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS

 8.1. Size:112K  onsemi
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NJVNJD35N04T4G

NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl

 8.2. Size:108K  onsemi
 njvnjd2873t4g.pdf pdf_icon

NJVNJD35N04T4G

NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N

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History: BTD2195L3 | 2SD317A

 

 
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