NJVNJD35N04T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NJVNJD35N04T4G
   Código: NJD35N04
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 700 V
   Tensión colector-emisor (Vce): 350 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 60 pF
   Ganancia de corriente contínua (hfe): 2000
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de transistor bipolar NJVNJD35N04T4G

NJVNJD35N04T4G Datasheet (PDF)

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Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: KTD1003B

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050