NJVNJD35N04T4G Datasheet, Equivalent, Cross Reference Search
Type Designator: NJVNJD35N04T4G
SMD Transistor Code: NJD35N04
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 90 MHz
Collector Capacitance (Cc): 60 pF
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO252
NJVNJD35N04T4G Transistor Equivalent Substitute - Cross-Reference Search
NJVNJD35N04T4G Datasheet (PDF)
njvnjd35n04.pdf
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