NJVNJD1718T4G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJVNJD1718T4G

Código: J1718G

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 33 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: DPAK

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NJVNJD1718T4G datasheet

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NJVNJD1718T4G

NJD1718, NJVNJD1718 Power Transistors PNP Silicon DPAK For Surface Mount Applications Designed for high-gain audio amplifier and power switching http //onsemi.com applications. Features SILICON Low Collector-Emitter Saturation Voltage POWER TRANSISTORS High Switching Speed 2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in 50 VOLTS NJV Prefix for Automotive and Other Appl

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NJVNJD1718T4G

NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor http //onsemi.com This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. DARLINGTON Features POWER TRANSISTORS Exceptional Safe Operating Area 4 AMPERES High VCE; High Current Gain 350 VOLTS

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NJVNJD1718T4G

NJD2873T4G, NJVNJD2873T4G Power Transistors NPN Silicon DPAK For Surface Mount Applications http //onsemi.com Designed for high-gain audio amplifier applications. SILICON Features POWER TRANSISTORS High DC Current Gain 2 AMPERES Low Collector-Emitter Saturation Voltage 50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in 15 WATTS N

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