NJVNJD1718T4G Datasheet, Equivalent, Cross Reference Search
Type Designator: NJVNJD1718T4G
SMD Transistor Code: J1718G
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 33 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: DPAK
NJVNJD1718T4G Transistor Equivalent Substitute - Cross-Reference Search
NJVNJD1718T4G Datasheet (PDF)
njvnjd1718t4g.pdf
NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl
njvnjd35n04.pdf
NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS
njvnjd2873t4g.pdf
NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .