All Transistors. NJVNJD1718T4G Datasheet

 

NJVNJD1718T4G Datasheet and Replacement


   Type Designator: NJVNJD1718T4G
   SMD Transistor Code: J1718G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 33 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: DPAK
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NJVNJD1718T4G Datasheet (PDF)

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NJVNJD1718T4G

NJD1718, NJVNJD1718Power TransistorsPNP Silicon DPAK For Surface MountApplicationsDesigned for high-gain audio amplifier and power switchinghttp://onsemi.comapplications.FeaturesSILICON Low Collector-Emitter Saturation VoltagePOWER TRANSISTORS High Switching Speed2 AMPERES Epoxy Meets UL 94 V-0 @ 0.125 in50 VOLTS NJV Prefix for Automotive and Other Appl

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NJVNJD1718T4G

NJD35N04G,NJVNJD35N04G,NJVNJD35N04T4GNPN Darlington PowerTransistorhttp://onsemi.comThis high voltage power Darlington has been specifically designedfor inductive applications such as Electronic Ignition, SwitchingRegulators and Motor Control.DARLINGTONFeaturesPOWER TRANSISTORS Exceptional Safe Operating Area4 AMPERES High VCE; High Current Gain350 VOLTS

 8.2. Size:108K  onsemi
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NJVNJD1718T4G

NJD2873T4G,NJVNJD2873T4GPower TransistorsNPN Silicon DPAK For Surface MountApplicationshttp://onsemi.comDesigned for high-gain audio amplifier applications.SILICONFeaturesPOWER TRANSISTORS High DC Current Gain2 AMPERES Low Collector-Emitter Saturation Voltage50 VOLTS High Current-Gain - Bandwidth Product Epoxy Meets UL 94 V-0 @ 0.125 in15 WATTS N

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

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