NSS20601CF8T1G Todos los transistores

 

NSS20601CF8T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NSS20601CF8T1G
   Código: VD
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.4 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: DFN3X2

 Búsqueda de reemplazo de transistor bipolar NSS20601CF8T1G

 

NSS20601CF8T1G Datasheet (PDF)

 ..1. Size:83K  onsemi
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NSS20601CF8T1G

NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 3.1. Size:82K  onsemi
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NSS20601CF8T1G

NSS20601CF8T1G 20 V, 8.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa

 7.1. Size:106K  onsemi
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NSS20601CF8T1G

NSS20600CF8T1G 20 V, 7.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. http //onsem

 9.1. Size:202K  onsemi
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NSS20601CF8T1G

DATA SHEET www.onsemi.com Low VCE(sat) PNP Transistors 20 Volt, 2 Amp PNP Low VCE(sat) Transistors 20 V, 2 A NSS20200DMT MARKING DIAGRAM onsemi s e2PowerEdge family of low VCE(sat) transistors are 1 6 miniature surface mount devices featuring ultra low saturation voltage WDFN6 AT MG 2 5 (VCE(sat)) and high current gain capability. These are designed for use CASE 506AN G 3 4 1

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History: IR4055 | CHDTC115GKGP | NSP598 | NSE171 | CHEMH9GP | 2SC4675 | 2SC4783

 

 
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