NSS40201LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSS40201LT1G
Código: VB
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.54 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 45 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar NSS40201LT1G
NSS40201LT1G Datasheet (PDF)
nss40201lt1g nsv40201lt1g.pdf
NSS40201LT1G, NSV40201LT1G 40 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 40 VOLTS, 2.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat) TRA
nss40201lt1g.pdf
NSS40201LT1G, NSV40201LT1G 40 V, 2.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) http //onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These 40 VOLTS, 2.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW VCE(sat)
nss40201l.pdf
NSS40201LT1G 40 V, 4.0 A, Low VCE(sat) NPN Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications http //onsemi.com where affordable efficient energy control is importa
nss40200l nsv40200l.pdf
NSS40200L, NSV40200L 40 V, 2.0 A, Low VCE(sat) PNP Transistor ON Semiconductor s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These www.onsemi.com are designed for use in low voltage, high speed switching applications where affordable efficient energy control is im
Otros transistores... NJVNJD1718T4G , NSS20300MR6 , NSS20500UW3T2G , NSS20500UW3TBG , NSS20501UW3T2G , NSS20501UW3TBG , NSS20601CF8T1G , NSS40200LT1G , BD140 , NSS40300DDR2G , NSS40300MDR2G , NJVMJD112G , NJVMJD112T4G , NJVMJD117T4G , NJVMJD122T4G , NJVMJD127T4G , NJVMJD128T4G .
History: 2SC4688R | ISA1287AS1 | 2SC4593 | CHFMA10GP | IMH15AFRA | 2SA569 | INC5006AC1
History: 2SC4688R | ISA1287AS1 | 2SC4593 | CHFMA10GP | IMH15AFRA | 2SA569 | INC5006AC1
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
me15n10-g | 2n2905 equivalent | 2sa640 | 2sb527 | 30g124 | 75339p mosfet | a968 transistor | f1010e mosfet







