Биполярный транзистор NSS40201LT1G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: NSS40201LT1G
Маркировка: VB
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.54
W
Макcимально допустимое напряжение коллектор-база (Ucb): 40
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 2
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 150
MHz
Ёмкость коллекторного перехода (Cc): 45
pf
Статический коэффициент передачи тока (hfe): 200
Корпус транзистора:
SOT23
Аналоги (замена) для NSS40201LT1G
NSS40201LT1G
Datasheet (PDF)
..1. Size:86K onsemi
nss40201lt1g nsv40201lt1g.pdf 
NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat) TRA
..2. Size:106K onsemi
nss40201lt1g.pdf 
NSS40201LT1G,NSV40201LT1G40 V, 2.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These40 VOLTS, 2.0 AMPSare designed for use in low voltage, high speed switching applicationsNPN LOW VCE(sat)
5.1. Size:126K onsemi
nss40201l.pdf 
NSS40201LT1G40 V, 4.0 A, Low VCE(sat)NPN TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
7.1. Size:86K onsemi
nss40200l nsv40200l.pdf 
NSS40200L, NSV40200L40 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is im
7.2. Size:126K onsemi
nss40200l.pdf 
NSS40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
7.3. Size:127K onsemi
nss40200lt1g.pdf 
NSS40200LT1G,NSV40200LT1G40 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-40 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable
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