NJVMJD210T4G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJVMJD210T4G

Código: J210

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 65 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO252

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NJVMJD210T4G datasheet

 5.1. Size:142K  onsemi
 njvmjd210 mjd200.pdf pdf_icon

NJVMJD210T4G

MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES High DC Current Gain 25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix

 7.1. Size:200K  onsemi
 njvmjd243 njvmjd253.pdf pdf_icon

NJVMJD210T4G

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu

 7.2. Size:128K  onsemi
 njvmjd2955 njvmjd3055.pdf pdf_icon

NJVMJD210T4G

MOSTRAR MÁS

Otros transistores... NSS40300MDR2G, NJVMJD112G, NJVMJD112T4G, NJVMJD117T4G, NJVMJD122T4G, NJVMJD127T4G, NJVMJD128T4G, NJVMJD148T4G, 2SD718, NJVMJD243T4G, NJVMJD253T4G, NJVMJD2955T4G, NJVMJD3055T4G, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, NJVMJD31T4G