NJVMJD253T4G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NJVMJD253T4G

Código: J253

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12.5 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 40 MHz

Capacitancia de salida (Cc): 50 pF

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO252

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NJVMJD253T4G datasheet

 5.1. Size:200K  onsemi
 njvmjd243 njvmjd253.pdf pdf_icon

NJVMJD253T4G

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu

 7.1. Size:128K  onsemi
 njvmjd2955 njvmjd3055.pdf pdf_icon

NJVMJD253T4G

 7.2. Size:142K  onsemi
 njvmjd210 mjd200.pdf pdf_icon

NJVMJD253T4G

MJD200 (NPN), MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface http //onsemi.com Mount Applications Designed for low voltage, low-power, high-gain audio SILICON amplifier applications. POWER TRANSISTORS Features 5 AMPERES High DC Current Gain 25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix

MOSTRAR MÁS

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