2N68. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2N68 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N68

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 15 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 0.4 MHz

Ganancia de corriente contínua (hFE): 40

Encapsulados: MM1

Búsqueda de reemplazo de 2N68

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2N68 datasheet

0.1. Size:345K motorola
2n6823.pdf pdf_icon

0.2. Size:393K motorola
2n6836re.pdf pdf_icon

Order this document MOTOROLA by 2N6836/D SEMICONDUCTOR TECHNICAL DATA 2N6836 Designer's Data Sheet 15 AMPERE Switchmode Series Ultra-Fast NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 450 VOLTS 175 WATTS These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited fo

0.3. Size:208K international rectifier
2n681 2n5204.pdf pdf_icon

0.4. Size:133K international rectifier
2n6849 irff9130.pdf pdf_icon

PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry an

0.5. Size:197K international rectifier
2n6802u.pdf pdf_icon

PD - 91719B IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTORS JANTXV2N6802U SURFACE MOUNT (LCC-18) [REF MIL-PRF-19500/557] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE430 500V 1.50 2.5A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. Desinged

0.6. Size:149K international rectifier
2n6804 irf9130.pdf pdf_icon

PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804 HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9130 -100V 0.30 -11A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique pr

0.7. Size:130K international rectifier
2n6845 irff9120.pdf pdf_icon

PD - 90552C IRFF9120 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6845 HEXFET TRANSISTORS JANTXV2N6845 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/563 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9120 -100V 0.60 -4.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proce

0.8. Size:130K international rectifier
2n6800 irff330.pdf pdf_icon

PD - 90432C IRFF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800 HEXFET TRANSISTORS JANTXV2N6800 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF330 400V 1.0 3.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

0.9. Size:149K international rectifier
2n6806 irf9230.pdf pdf_icon

PD - 90548C IRF9230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6806 HEXFET TRANSISTORS JANTXV2N6806 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/562] 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF9230 -200V 0.80 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique p

0.10. Size:131K international rectifier
2n6851 irff9230.pdf pdf_icon

PD - 90551D IRFF9230 JANTX2N6851 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6851 HEXFET TRANSISTORS JANS2N6851 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9230 -200V 0.80 -4.0A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry

0.11. Size:130K international rectifier
2n6847 irff9220.pdf pdf_icon

PD - 90553C IRFF9220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6847 HEXFET TRANSISTORS JANTXV2N6847 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/563 200V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9220 -200V 1.5 -2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces

0.12. Size:129K international rectifier
2n6802 irff430.pdf pdf_icon

PD -90433C IRFF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802 HEXFET TRANSISTORS JANTXV2N6802 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/557 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF430 500V 1.5 2.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing

0.13. Size:99K international rectifier
irff1xx irff2xx irff3xx irff4xx 2n678x 2n679x 2n680x.pdf pdf_icon

0.14. Size:75K fairchild semi
2n6896.pdf pdf_icon

2N6896 Data Sheet December 2001 -6A, -100V, 0.600 Ohm, P-Channel Power Features MOSFET -6A, -100V The 2N6896 is a P-Channel enhancement mode silicon gate rDS(ON) = 0.600 power MOS field effect transistor designed for high-speed SOA is Power Dissipation Limited applications such as switching regulators, switching converters, relay drivers, and drivers for high power b

0.15. Size:106K njs
2n6898.pdf pdf_icon

0.16. Size:66K omnirel
2n6796 2n6798 2n6800 2n6802.pdf pdf_icon

2N6796, JANTX2N6796 JANTXV2N6796 2N6800, JANTX2N6800, JANTXV2N6800 2N6798, JANTX2N6798 JANTXV2N6798 2N6802, JANTX2N6802, JANTXV2N6802 JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE, QUALIFIED TO MIL-PRF-19500/557 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/557 DESCRIPTIO

0.17. Size:256K no
2n6845u 2n6847u 2n6847u.pdf pdf_icon

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/563G shall be completed by 9 February 2013. 9 November 2012 SUPERSEDING MIL-PRF-19500/563F 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U, JA

0.18. Size:24K semelab
2n6800.pdf pdf_icon

2N6800 SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET BVDSS 400V ID 3.0A RDS(on) 1.0 FEATURES ! AVALANCHE ENERGY RATED

0.19. Size:19K semelab
2n6845lcc4.pdf pdf_icon

2N6845LCC4 IRFE9120 MECHANICAL DATA Dimensions in mm (inches) P CHANNEL POWER MOSFET 9.14 (0.360) 1.27 (0.050) 8.64 (0.340) 1.07 (0.040) VDSS -100V 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) ID(cont) -3.5A 1.02 (0.040) 11 17 RDS(on) 0.6 10 18 7.62 (0.300) 7.12 (0.280) 9 1 0.76 (0.030) 8 2 0.51 (0.020) FEATURES 0.33 (0.013) Rad. 0.08 (0.003) 7 6 5 4 3

0.20. Size:96K semelab
2n6800lcc4.pdf pdf_icon

0.21. Size:120K semelab
2n6849hp.pdf pdf_icon

P-CHANNEL POWER MOSFET 2N6849HP MOSFET Transistor In A Hermetic Metal TO-205AD Package Single Pulse Avalanche Energy Rated Designed For Switching, Power Supply, Motor Control and Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage -100V VDG RGS = 20K Drain Gat

0.22. Size:148K jmnic
2n6836.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITION

0.23. Size:150K jmnic
2n6833.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2N6833 DESCRIPTION With TO-220 package Hihg voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMB

0.24. Size:385K kec
kf12n68f.pdf pdf_icon

KF12N68F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli

0.25. Size:175K microsemi
2n6800u.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS JAN 2N6800 2N6800U JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source Voltag

0.26. Size:147K microsemi
2n6849u.pdf pdf_icon

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com P-CHANNEL MOSFET Qualified per MIL-PRF-19500/564 DEVICES LEVELS JAN 2N6849 2N6849U JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain Source

0.27. Size:1182K cn scilicon
sfp085n68c2 sfb082n68c2.pdf pdf_icon

SFP085N68C2,SFB082N68C2 N-MOSFET 68V, 7.1m , 81A Features Product Summary Extremely low on-resistance RDS(on) VDS 68V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 7.1m Qualified according to JEDEC criteria ID 81A 100% DVDS Tested Applications 100% Avalanche Tested Motor control and drive Battery management UPS (Uninterrupible Power Supplies) SFP085

0.28. Size:660K cn scilicon
sfd082n68c2.pdf pdf_icon

SFD082N68C2 N-MOSFET 68V, 7.1m , 85A Features Product Summary Extremely low on-resistance RDS(on) VDS 68V Excellent QgxRDS(on) product(FOM) RDS(on) typ. 7.1m Qualified according to JEDEC criteria ID 85A 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested Motor control and drive

0.29. Size:79K inchange semiconductor
2n6835.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6835 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

0.30. Size:117K inchange semiconductor
2n6836.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PA

0.31. Size:192K inchange semiconductor
2n6837.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N6837 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic-

0.32. Size:122K inchange semiconductor
2n6834.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6834 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

0.33. Size:198K inchange semiconductor
2n6833.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6833 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica

Otros transistores... 2N677A , 2N677B , 2N677C , 2N678 , 2N678A , 2N678B , 2N678C , 2N679 , TIP3055 , 2N680 , 2N68-13 , 2N6833 , 2N6834 , 2N6835 , 2N6836 , 2N6837 , 2N694 .