2N68 PDF and Equivalents Search

 

2N68 Specs and Replacement

Type Designator: 2N68

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 75 °C

Electrical Characteristics

Transition Frequency (ft): 0.4 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: MM1

 2N68 Substitution

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2N68 datasheet

 0.1. Size:345K  motorola

2n6823.pdf pdf_icon

2N68

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 0.2. Size:393K  motorola

2n6836re.pdf pdf_icon

2N68

Order this document MOTOROLA by 2N6836/D SEMICONDUCTOR TECHNICAL DATA 2N6836 Designer's Data Sheet 15 AMPERE Switchmode Series Ultra-Fast NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 450 VOLTS 175 WATTS These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited fo... See More ⇒

 0.3. Size:208K  international rectifier

2n681 2n5204.pdf pdf_icon

2N68

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 0.4. Size:133K  international rectifier

2n6849 irff9130.pdf pdf_icon

2N68

PD - 90550D IRFF9130 JANTX2N6849 REPETITIVE AVALANCHE AND dv/dt RATED JANTXV2N6849 HEXFET TRANSISTORS JANS2N6849 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/564 100V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF9130 -100V 0.30 -6.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry an... See More ⇒

Detailed specifications: 2N677A, 2N677B, 2N677C, 2N678, 2N678A, 2N678B, 2N678C, 2N679, TIP3055, 2N680, 2N68-13, 2N6833, 2N6834, 2N6835, 2N6836, 2N6837, 2N694

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