NSBA114TF3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NSBA114TF3T5G
Código: L
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SOT1123-3
Búsqueda de reemplazo de transistor bipolar NSBA114TF3T5G
NSBA114TF3T5G Datasheet (PDF)
nsba114tf3t5g.pdf
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nsba114tdxv6t.pdf
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nsba114tdp6t5g.pdf
NSBA114EDP6T5G SeriesPreferred DevicesDual Digital Transistors(BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistor(3) (2) (1)contains a single transistor with a monolithic bias network consistin
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