Биполярный транзистор NSBA114TF3T5G Даташит. Аналоги
Наименование производителя: NSBA114TF3T5G
Маркировка: L
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 10 kOhm
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT1123-3
- подбор биполярного транзистора по параметрам
NSBA114TF3T5G Datasheet (PDF)
nsba114tf3t5g.pdf

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nsba114tdxv6t5g.pdf

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nsba114tdxv6t.pdf

NSBA114EDXV6T1,NSBA114EDXV6T5 SERIESPreferred DevicesDual Bias ResistorTransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor Network(3) (2) (1)The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digi
nsba114tdp6t5g.pdf

NSBA114EDP6T5G SeriesPreferred DevicesDual Digital Transistors(BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistor(3) (2) (1)contains a single transistor with a monolithic bias network consistin
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History: ECG39 | FZT655 | 2G304 | BUJ303AX | 3DG12 | DTA115EEFRA | CHDTA143TEGP



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