2N6833
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6833
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80
W
Tensión colector-base (Vcb): 850
V
Tensión colector-emisor (Vce): 450
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 15
MHz
Capacitancia de salida (Cc): 200
pF
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de transistor bipolar 2N6833
2N6833
Datasheet (PDF)
..1. Size:150K jmnic
2n6833.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6833 DESCRIPTION With TO-220 package Hihg voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMB
..2. Size:198K inchange semiconductor
2n6833.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6833 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica
9.1. Size:393K motorola
2n6836re.pdf
Order this documentMOTOROLAby 2N6836/DSEMICONDUCTOR TECHNICAL DATA2N6836Designer's Data Sheet15 AMPERESwitchmode Series Ultra-FastNPN SILICONPOWER TRANSISTORNPN Silicon Power Transistors450 VOLTS175 WATTSThese transistors are designed for highvoltage, highspeed, power switching ininductive circuits where fall time is critical. They are particularly suited fo
9.2. Size:148K jmnic
2n6836.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION
9.3. Size:79K inchange semiconductor
2n6835.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6835 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
9.4. Size:117K inchange semiconductor
2n6836.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA
9.5. Size:192K inchange semiconductor
2n6837.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6837DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-
9.6. Size:122K inchange semiconductor
2n6834.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6834 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
Otros transistores... 2N678
, 2N678A
, 2N678B
, 2N678C
, 2N679
, 2N68
, 2N680
, 2N68-13
, BC557
, 2N6834
, 2N6835
, 2N6836
, 2N6837
, 2N694
, 2N695
, 2N696
, 2N696A
.