2N6833 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6833
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 200 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO220
2N6833 Transistor Equivalent Substitute - Cross-Reference Search
2N6833 Datasheet (PDF)
2n6833.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6833 DESCRIPTION With TO-220 package Hihg voltage,high speed APPLICATIONS Switching regulators Inverters Solenoid and relay drivers Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25) SYMB
2n6833.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6833 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applica
2n6836re.pdf
Order this documentMOTOROLAby 2N6836/DSEMICONDUCTOR TECHNICAL DATA2N6836Designer's Data Sheet15 AMPERESwitchmode Series Ultra-FastNPN SILICONPOWER TRANSISTORNPN Silicon Power Tra
2n6836.pdf
JMnic Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITION
2n6835.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6835 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
2n6836.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Switching regulators Inverters Motor controls Deflection circuits PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PA
2n6837.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6837DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-
2n6834.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6834 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC1624
