NST3904DXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NST3904DXV6T1G
Código: MA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT563
Búsqueda de reemplazo de NST3904DXV6T1G
NST3904DXV6T1G Datasheet (PDF)
nst3904dxv6t1g nsvt3904dxv6t1g nst3904dxv6t5g.pdf

Dual General PurposeTransistorNST3904DXV6T1G,NSVT3904DXV6T1G,NST3904DXV6T5Gwww.onsemi.comThe NST/NSV3904DXV6 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563(3) (2) (1)six-leaded surface mount package. By putting two discrete devices inone package, this device is ide
nst3904dxv6t1-5.pdf

NST3904DXV6T1,NST3904DXV6T5Dual General PurposeTransistorThe NST3904DXV6T1 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalhttp://onsemi.compurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in(3) (2) (1)one package, this device is ideal for low-power su
nst3904dxv6t.pdf

NST3904DXV6T1,NSVT3904DXV6T1,NST3904DXV6T5,SNST3904DXV6T5Dual General Purposehttp://onsemi.comTransistorThe NST3904DXV6T1 device is a spin-off of our popular(3) (2) (1)SOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in Q1 Q2one packag
nst3904dp6.pdf

NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
Otros transistores... NSBA114TDXV6T1G , NSBA114TDXV6T5G , NSBA114TF3T5G , NSBA114YDP6T5G , NSBA114YDXV6T1G , NSBA114YF3T5G , NST30010MXV6T1G , NST3904DP6T5G , SS8050 , NST3904DXV6T5G , NST3906DP6T5G , NST3906DXV6T1G , NST3946DP6T5G , NST3946DXV6T1G , NST3946DXV6T5G , NST45010MW6T1G , NST489AMT1G .
History: NSS1C300ET4G | 2SB1123R
History: NSS1C300ET4G | 2SB1123R



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2n5133 datasheet | 2sa726 transistor | 7506 mosfet | irlr8726 datasheet | ru7088r mosfet | mp40 transistor | fgpf4636 datasheet | 2sc1945